Hynix Details Ferroelectric Memory
The company has available 4Mbit and 8Mbit densities produced on a 0.25micron process technology. The FeRAM samples operate at 3V with data access times of 70nsecs and are capable of 100bn read/write repetitions.
Unlike existing products that are composed of two transistors and two capacitors, FeRAM uses a one transistor, one capacitor (1T1C) cell structure. Hynix device can operate on lower than 1Volt, exceeding traditional FeRAM limitations.
The technology is expandable to 64Mbit without additional development costs, says Hynix.
The Korean company has applied for more than 150 US patents for FeRAM technologies. The company is looking to mobile and multimedia applications including handsets, PDAs, smart phones and smart cards.
Hynix is present details of its FeRAM at the 15th ISIF (International Symposium on Integrated Ferroelectrics) conference today.