News Article
Density Boost For Flash
Toshiba introduced a 2Gbit single-die NAND Flash memory with double the capacity of the companys present largest single-die NAND Flash device. Toshiba also announced a 4Gbit NAND Flash IC that stacks two of the 2Gbit NAND Flash dies in a single package.
Toshiba introduced a 2Gbit single-die NAND Flash memory with double the capacity of the companys present largest single-die NAND Flash device. Toshiba also announced a 4Gbit NAND Flash IC that stacks two of the 2Gbit NAND Flash dies in a single package.
Samples of the 2Gbit devices are available now. The 4Gbit stacked will be available in April 2003. Mass production will start in June 2003 at a monthly capacity of 300,000 units for each IC.
Toshiba and SanDisk developed the memory under a comprehensive agreement on joint development of NAND Flash dating from 1999. The new chips will be produced with 0.13micron process technology at Flash Vision Japan, a joint venture between Toshiba and SanDisk located in Yokkaichi, Japan. The companys previous 1Gbit NAND Flash used 0.16micron process technology.
