News Article
ASM International Has Been Granted US Patents On Its Low-k Dielectric PECVD
ASM International has been granted US patents on its low-k dielectric PECVD
(plasma enhanced chemical vapor deposition) film deposition technology
(Nos.6,352,945, 6,383,955 and 6,410,463).
Tominori Yoshida, product manager of ASM's Low-k Modules group, reports:
Aurora low-k dielectrics are a family of OSGs (organosilicate glass), also
known as CDO (carbon-doped oxide). The films are PECVD deposited on hot
wafers and do not need anneal steps. The k value is less than 3. The films
are expected to be extendable to k values of less than 2.4 using the same
PECVD platform, for use in 65nm and lower technology nodes. Customers are
expected to ship ICs that use Aurora this year.
known as CDO (carbon-doped oxide). The films are PECVD deposited on hot
wafers and do not need anneal steps. The k value is less than 3. The films
are expected to be extendable to k values of less than 2.4 using the same
PECVD platform, for use in 65nm and lower technology nodes. Customers are
expected to ship ICs that use Aurora this year.