Matsushita Joins IMEC’s Worldwide High-k Research Team.
Matsushita has joined these programs to develop and implement high-k gate stacks for the (sub)-65nm node. As part of the contract, a Matsushita researcher will join IMEC's research team. The agreement is considered as the start of a long-term partnership between the two organizations. The work will focus on the implementation of high-k gate stacks in advanced devices.
IMEC is already collaborating on the development of high-k dielectrics with International Sematech and Hitachi. With Matsushita joining IMEC's high-k programs, a worldwide consortium of semiconductor manufacturers and IDMs will be well placed to accelerate the development and integration of high-k gate stacks.
"We are very pleased to have one of the leading Japanese IDMs, Matsushita, joining our worldwide research team on high-k dielectrics. Together, we will take the crucial leap from process step development to device implementation of high-k gate stacks," said Prof. Gilbert Declerck, President and CEO of IMEC. "The addition of Matsushita to this program is a significant extension of our partnerships in the strategically important Japanese sector."